Ban A.M. Bader; Oday A. Hamadi; K. Yousif Afnan
Abstract
In this work, the single beam scanning technique was employed to expressthe nonlinear interaction between laser radiation and semiconductor material(lead sulfide) as well as to determine ...
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In this work, the single beam scanning technique was employed to expressthe nonlinear interaction between laser radiation and semiconductor material(lead sulfide) as well as to determine the thermooptic coefficient of thematerial (lead sulfide). Direct measurement, low cost and reliability are themain features of this technique. The value of the thermooptic coefficient wasdetermined to be -5.8x10-5K-1 for PbS thin film. Due to authors review, this isthe first attempt in Iraq to measure such parameter in semiconductor thinfilms.
